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	<title>Research &#8211; Department of Physics, Mawlana Bhashani Science and Technology University</title>
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	<title>Research &#8211; Department of Physics, Mawlana Bhashani Science and Technology University</title>
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		<title>Influence of Ru-dopant on the structural, morphological, optical and electrical properties of NiO films</title>
		<link>https://phy.mbstu.ac.bd/mechanical-electronic-optical-and-thermoelectric-properties-of-rb2tlgax6-x-f-i-lead-free-double-perovskites-a-first-principles-study/</link>
		
		<dc:creator><![CDATA[Nazmul Khan Liton]]></dc:creator>
		<pubDate>Mon, 23 Dec 2024 05:08:28 +0000</pubDate>
				<category><![CDATA[Research]]></category>
		<guid isPermaLink="false">https://phy.mbstu.ac.bd/?p=18212</guid>

					<description><![CDATA[Authors: Yeasir Ahmed, Md Rasadujjaman*, Md Rezaul Karim, Md Sahab Uddin,Md Anwar Hossain* Abstract: In this study, the influence of ruthenium (Ru) doping on nickel oxide (NiO) films were investigated to achieve suitable optoelectronic properties. NiO films with different Ru doping &#8230; ]]></description>
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<p><strong>Authors:</strong> Yeasir Ahmed, Md Rasadujjaman*, Md Rezaul Karim, Md Sahab Uddin,<br>Md Anwar Hossain*</p>



<p><strong>Abstract:</strong> In this study, the influence of ruthenium (Ru) doping on nickel oxide (NiO) films were investigated to achieve suitable optoelectronic properties. NiO films with different Ru doping concentrations (1.5, 2.5, and 3.5 wt%) were coated onto a cleaned hot (80 °C) glass substrate using a low-cost, home-made spin coater. The films were then pre-annealed at 80 °C and further annealed at 400 °C for crystallization. The formation of pure NiO films exhibiting a cubic polycrystalline structure with favorable growth orientation towards the (200) plane was confirmed. Ru doping at 1.5 and 2.5 wt% suppressed the growth of NiO films, and further incorporation of Ru (3.5 wt%) returns the preferred orientation in the (200) plane. Ru doping into NiO films generated defects such as void structures on the surface and shown a uniform distribution of Ru dopant across the films and confirmed the formation of NiO–RuO<sub>2</sub>&nbsp;composite. The band gap was reduced from 3.68 to 3.48 eV until the Ru doping concentration reached 2.5 wt%, which may be due to the generation of additional energy levels near the valence band, resulting in reduced transmission. The estimated resistivity decreased from 76.03 to 10.04 Ω–cm due to Ru doping, indicating an increase in film conductivity. Therefore, the introduction of Ru resulted in a reduced resistivity with preferential band gap, indicating a positive influence on the properties of NiO films.</p>



<p><a href="https://www.sciencedirect.com/science/article/pii/S0925838824046218"></a></p>



<p><strong>Paper Link:</strong> <a href="https://www.sciencedirect.com/science/article/pii/S0925838824046735?dgcid=author">https://www.sciencedirect.com/science/article/pii/S0925838824046735?dgcid=author</a></p>



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		<title>Shorter variation of standard deviation for small sample</title>
		<link>https://phy.mbstu.ac.bd/shorter-variation-of-standard-deviation-for-small-sample/</link>
		
		<dc:creator><![CDATA[Nazmul Khan Liton]]></dc:creator>
		<pubDate>Mon, 25 Mar 2024 10:38:10 +0000</pubDate>
				<category><![CDATA[Research]]></category>
		<guid isPermaLink="false">https://cps.mbstu.ac.bd/?p=17753</guid>

					<description><![CDATA[Authors: MF Hossain, MA Shams Adnan, AH Joarder Abstract: The present study ensembles the variation of standard deviation in terms of range for small sample. Smaller ranges having minimum upper limit of the sample standard deviation and sample mean deviation &#8230; ]]></description>
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<p><strong>Authors: </strong>MF Hossain, MA Shams Adnan, AH Joarder</p>



<p><strong>Abstract:</strong> The present study ensembles the variation of standard deviation in terms of range for small sample. Smaller ranges having minimum upper limit of the sample standard deviation and sample mean deviation have been found. A comparative study is conducted between their dispersions and evaluated by a couple of examples.</p>



<p><strong>Paper Link:</strong> https://www.tandfonline.com/doi/abs/10.1080/0020739X.2013.822588</p>



<p><strong>Published:</strong> International journal of mathematical education in science and technology</p>
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		<item>
		<title>An Alternative Approach of Binomial and Multinomial Distributions</title>
		<link>https://phy.mbstu.ac.bd/an-alternative-approach-of-binomial-and-multinomial-distributions/</link>
		
		<dc:creator><![CDATA[Nazmul Khan Liton]]></dc:creator>
		<pubDate>Mon, 25 Mar 2024 10:24:37 +0000</pubDate>
				<category><![CDATA[Research]]></category>
		<guid isPermaLink="false">https://cps.mbstu.ac.bd/?p=17745</guid>

					<description><![CDATA[Authors: MA Shams Adnan, T Ferdous Khan, F Hossain, A Albalawi Abstract: In this paper we have tried to present an alternative approach for two discrete distributions such as Binomial andMultinomial with a new concept of sampling having a more &#8230; ]]></description>
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<p><strong>Authors: </strong>MA Shams Adnan, T Ferdous Khan, F Hossain, A Albalawi</p>



<p><strong>Abstract:</strong> In this paper we have tried to present an alternative approach for two discrete distributions such as Binomial andMultinomial with a new concept of sampling having a more general form apart from the traditional methods ofsampling. The existing distributions may be obtained as a special case of our newly suggested technique. The basicdistributional properties of the proposed distributions are also been examined including the limiting form of theproposed Binomial distribution to normal distribution</p>



<p><strong>Paper Link:</strong> https://link.springer.com/article/10.2991/jsta.2017.16.2.11</p>



<p><strong>Published:</strong> Journal of Statistical Theory and Applications 16 (2), 269-283<br></p>
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